The 300mm Path to 2D Transistors

The industry is moving toward a scalable, back-end-compatible integration approach for TMD-based n and pFETs. ASML, TSMC, and imec have demonstrated a 300mm integration route that achieves scaled nFETs and pFETs with a 50nm contacted poly pitch (CPP).

This development addresses the primary barrier to industrial adoption: the lack of a 300mm integration route capable of offering TMD-based transistors at industry-relevant dimensions while maintaining lab-scale performance. By using single-patterning EUV lithography, optimized with ASML, the team achieved this 50nm CPP without affecting the performance of the 2D n and pFETs.

The demonstration utilized MoS2 as the channel material for scaled nFETs, alongside WS2 or WSe2 for pFETs. The results include:

• Scaled n and pFETs with 50nm CPP.
• Very low off current (Ioff) at zero gate voltage (Vg=0V) for both transistor polarities.
• pFETs with WSe2 channels performing close to record lab-based devices.

The integration approach, which places n and pFETs on the same 300mm wafer, is proven stable with 94% operational transistors (where Imax/Imin >105). This represents a transition from lab-scale demonstrations to a process flow that could support ultra-scaled logic, back-end-of-line, and wafer backside applications.

The ability to maintain electrostatic channel control while preserving carrier mobility at ultra-scaled gate and channel lengths suggests that 2D transition metal dichalcogenides (TMDs) can effectively augment the logic scaling technology roadmap. While these materials are typically optimized for small channel lengths, they often require large contact areas to keep resistance low, which traditionally hinders scaling. This new route bypasses that constraint.

The proposed process flow remains applicable to 2D channel materials beyond MoS2, WS2, and WSe2.

As the industry moves toward 2026 and beyond, the question is no longer if 2D materials work in a lab, but how quickly these 300mm integration techniques can be deployed across high-volume manufacturing.

Source